Inducing and probing phase transition by laser in Ge:Te:Sb materials

IM2NP and LP3 labs propose to combine their capabilities and efforts for exploring and studying phase transitions in a multi-compound phase change material (Ge:Te:Sb), fabricated by ST Microelectronics. This material is being heavily studied for the fabrication of Phase Change Memories (PCM) that are among the most mature non-volatile emerging memories to allow data storage at high programing speed with enhanced endurance compared to today Flash technology.
M. Putero/P. Hans/O. Thomas – IM2NP and O. Utéza/M. Sentis – LP3 - Contacter
LP3, Luminy Campus Marseille

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